Metal interconnection read only memory cell

摘要

A method and system for forming a programmable logic array from a plurality of read only memory cells. The interconnection of the first metal layer with a second metal layer results in the formation of a read only memory cell therebetween, such that a plurality of read only memory cells can be configured to form a programmable logic array. One or more of the read only memory cells may be programmed utilizing a particular contact via programming technique, resulting in a shortened turn-around-time, reduced read only memory cell size, and a reduction in the necessity of requiring additional masks for read only memory logical processes associated with the programmable logic array. The memory cells comprise mask ROM cells which do not require extra masks, and can be programmed utilizing via programming techniques. The utilization of a first and second metal layer in interconnection configuration for a ROM cell results in smaller cell size.