发明名称 Process for producing a semiconductor wafer
摘要 A process for producing a semiconductor wafer is based upon etching the semiconductor wafer with an etching medium flowing in a laminar flow along a direction of flow toward an edge of the semiconductor wafer. There is a protective shield arranged in front of the edge of the semiconductor wafer, so that the etching medium flows onto the protective shield and not onto the edge of the semiconductor wafer. There is also a process that has the semiconductor wafer being inclined with respect to the direction of flow of the etching medium, so that there is an angle of less than 180° between the direction of flow of the etching medium and a first side of the semiconductor wafer. Also, there is an angle of greater than 180° between the direction of flow of the etching medium and a second side of the semiconductor wafer, and the second side of the semiconductor wafer is subsequently polished.
申请公布号 US2003022506(A1) 申请公布日期 2003.01.30
申请号 US20010764634 申请日期 2001.01.18
申请人 SCHWAB GUNTER;FRANKE HELMUT;SCHOFBERGER MANFRED 发明人 SCHWAB GUNTER;FRANKE HELMUT;SCHOFBERGER MANFRED
分类号 H01L21/02;H01L21/00;H01L21/304;H01L21/306;(IPC1-7):H01L21/302;H01L21/461 主分类号 H01L21/02
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