发明名称 |
Method for manufacturing semiconductor device |
摘要 |
In a method for manufacturing a semiconductor device, impurity ion is implanted into a semiconductor layer so as to form an ion implantation region in the semiconductor layer, and at least the ion implantation region is turned amorphous. Then, an insulating film is formed on the semiconductor layer at a temperature at which the ion implantation region is not crystallized, and then the semiconductor layer is annealed in a non-oxidizing atmosphere so as to activate the impurity ion implanted into the semiconductor layer.
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申请公布号 |
US2003022473(A1) |
申请公布日期 |
2003.01.30 |
申请号 |
US20020172750 |
申请日期 |
2002.06.17 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
MATSUMOTO MICHIKAZU;SENGOKU NAOHISA;KOBAYASHI AYUMI |
分类号 |
H01L21/8234;(IPC1-7):H01L21/425 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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