| 摘要 |
<p>A gate electrode side-wall conductive film (120) is formed on the side wall of a gate electrode (118) via a gate electrode side-wall insulation film (119). This gate electrode side-wall conductive film (120) is properly removed by an anisotropic etching to be selective for the gate electrode side-wall insulation film (119), thereby separating a source region from a drain region and at the same time forming local wiring by the gate electrode side-wall conductive film (120). In addition, the gate electrode (118) is properly removed by etching to be selective for the gate electrode side-wall insulation film (119) to thereby form a gate electrode wiring at the same time. Accordingly, an SRAM device is provided that can be highly integrated by simplifying wiring and reducing a memory cell area.</p> |
