发明名称 Semiconductor memory device and information device
摘要 A semiconductor memory device in which an input command controls an operation includes a command state machine for decoding the input command and outputting the decoding result; a plurality of status registers for storing state information of the semiconductor memory device; a first switching circuit for receiving data from the plurality of status registers, and selectively outputting the data from at least one of the plurality of status registers to a first data bus; and a second switching circuit for receiving the data on the first data bus and data from a sense amplifier, and selectively outputting either one of data to a second data bus. At least the first switching circuit, among the first and second switching circuits, is controlled by the decoding result output by the command state machine.
申请公布号 US2003021163(A1) 申请公布日期 2003.01.30
申请号 US20020183857 申请日期 2002.06.25
申请人 NAKAZAWA KEN;SUMITANI KEN;FUKUI HARUYASU;MORI YASUMICHI 发明人 NAKAZAWA KEN;SUMITANI KEN;FUKUI HARUYASU;MORI YASUMICHI
分类号 G11C11/41;G06F12/02;G11C7/22;G11C16/02;G11C16/06;(IPC1-7):G11C7/00;G11C8/00 主分类号 G11C11/41
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