PLANAR METAL ELECTROPROCESSING

摘要

The present invention relates to a method for forming a planar conductive surface on a wafer. In one aspect, the present invention uses a no-contact process with electrochemical deposition, followed by a contact process with electrochemical mechanical deposition. In another aspect the no-contact process with electrochemical deposition uses a solution tailored to this no- contact process, and the contact process with electrochemical mechanical deposition uses a different solution tailored to this contact process.