SEMICONDUCTOR MEMORY DEVICE

摘要

A semiconductor memory device including different types of memories capable of reducing the size (thickness) and increasing the speed. The semiconductor memory device includes a first memory having bit lines, word lines intersecting the bit lines, and storage means (43) arranged between the bit lines and the word lines, and a second memory (13) whose type is different from the first memory. The first memory and the second memory are formed on a semiconductor substrate (31). When the first memory and the second memory are formed so as to be stacked on each other on the semiconductor substrate (31), the thickness in the height direction is reduced, thereby further reducing the size (thickness). Moreover, for connection between the first memory and the second memory, there is no need of using a wire or soldering having a large parasitic capacity. Accordingly, it is possible to transmit and receive data between the first memory and the second memory at a high speed.