| 摘要 |
PURPOSE: A substrate in a plasma enhanced chemical vapor deposition(PECVD) process is provided to generate stable plasma in a high output and to fabricate a carbon nano-tube on a glass substrate of a large area, by removing process unstability occurring in depositing a conductive thin film on an insulation substrate. CONSTITUTION: A deficient part is prepared in the lower corner portion of the insulation substrate(21) in the PECVD process. The deficient part is formed of an inclined plane which is inclined at a predetermined angle to the side surface and bottom surface of the substrate. A chrome layer and a nickel layer are formed on the insulation substrate.
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