发明名称 POLYMER COMPOUND, RESIST MATERIAL, AND METHOD OF FORMING PATTERN
摘要 PROBLEM TO BE SOLVED: To provide a resist material comprising a polymer compound as a base resin, the material being useful for a microwork by an electron ray or a far-ultraviolet ray, because the material perceives a high energy ray and is excellent in sensitivity, resolving properties and etching resistance. SOLUTION: The polymer compound having a weight-average molecular weight of 1,000-500,000 which has a repeating unit represented by formulas (1-1) and (1-2) (wherein R<1> is a hydrogen atom, or a 1-15C straight-chain shape, branched shape, or ring shape hydroxyalkyl group, alkoxyalkyl group, or alkoxycarbonly group, and a part or the whole of hydrogen atoms on constituent carbon atoms may be substituted with a halogen atom; and k is 0 or 1).
申请公布号 JP2003026728(A) 申请公布日期 2003.01.29
申请号 JP20010213194 申请日期 2001.07.13
申请人 SHIN ETSU CHEM CO LTD 发明人 NISHI TSUNEHIRO;NAKAJIMA MUTSUO;WATANABE TAKESHI
分类号 G03F7/039;C08F32/00;C08G61/08;H01L21/027 主分类号 G03F7/039
代理机构 代理人
主权项
地址