| 摘要 |
A photodiode array 1 includes P<+> diffusion layers 4 and 5, N<+> channel stop layers 6 and 7, an N<+> diffusion layer 8 and the like. The P<+> diffusion layers 4 and 5 and the N<+> channel stop layers 6 and 7 are provided on a surface side opposite to an incident surface of a semiconductor substrate 3. The N<+> channel stop layer 6 is provided between the P<+> diffusion layers 4, 5 adjacent to each other, and exhibits a form of lattice so as to separate the P<+> diffusion layers 4, 5. The N<+> channel stop layer 7 is provided in the form of frame on the outside of an array of the P<+> diffusion layer 5 continuously with the N<+> channel stop layer 6. The N<+> channel stop layer 7 is set wider than the N<+> channel stop layer 6. To the incident surface of the semiconductor substrate 3, a scintillator is optically connected. <IMAGE> |
