METHOD FOR FABRICATING CLADDING LAYER IN TOP CONDUCTOR

摘要

PURPOSE: A method for fabricating cladding layer in top conductor is provided to develop a magnetic memory with flux closure structures that prevent disruptions to magnetization. CONSTITUTION: A method for cladding at least two sides of a top conductor(20) for a memory device(10) in ferromagnetic material(58), the method comprising the steps of: forming a trench with side walls(50) in a coating layer(40) above the memory device; depositing a ferromagnetic material(58) along the side walls of the trench; depositing a conductor material(62) in the trench between the ferromagnetic material along the side walls of the trench whereby a cladding of the ferromagnetic material is formed on two sides of the top conductor.