PROGRAMMING METHOD FOR NON-VOLATILE SEMICONDUCTOR MEMORY

摘要

PURPOSE: To prevent disturbance in a non-selection cell being adjacent a selection cell at programming of the selection cell. CONSTITUTION: This method is a method for programming data for a memory element 108B of a twin memory cell (i). A word line WL1 is set to word line selection voltage for program (1 V), a control gate CG £i+1| is set to control gate voltage for program (5.5 V), and a control gate CG £i| is set to override voltage (2.5 V). A bit line BL £i+1| is set to bit line voltage for program (5 V), and a bit line BL £i+2| is not set to 0 V but Vdd.