| 摘要 |
PURPOSE: A method of fabricating blue semiconductor laser having vertical active layer is provided to be capable of improving an operating voltage of a device by minimizing contact resistance and maximizing a radiation area. CONSTITUTION: A buffer layer(20), an undoped GaN layer(30) and an n-GaN layer(40) are sequentially grown on a sapphire substrate(10) by a MOCVD method. A SiO2 layer is deposited on the n-GaN layer(40) and is patterned so as to have a stripe pattern. A p-AlGaN layer(60) is formed on the n-GaN layer(40) on which no SiO2 exists. After removing the SiO2 layer, an n-AlGaN clad layer(70), an n-GaN wave guide layer/multi Quantum well active layer(InGaN)(80), a p-GaN wave guide layer/p-AlGaN clad layer(90), and a p-GaN layer(100) are sequentially grown on a resultant structure. A mesa is formed through a dry etch process so that the n-GaN layer(40) is exposed. An n-type electrode(110) is formed on an exposed n-GaN layer, and a p-type electrode(120) is formed on a p-GaN contact layer(100).
|
