发明名称 MASK, PATTERN FORMING METHOD USING THE SAME, AND LITHOGRAPHY
摘要 <p>PROBLEM TO BE SOLVED: To provide a mask capable of forming steps different from each other in layer thickness and excellent in intrasurface uniformity in a resist by a general exposure system. SOLUTION: The photomask 1 used for exposing a photosensitive resin layer 7 stacked on a substrate 6 to form a latent image in the layer 7 consists of a transparent support 2 and opaque light shielding parts 3 and a transmissive part 4 disposed on the support 2, and the transmissive part 4 has a first transmissive wavelength selective region 4a and a second transmissive wavelength selective region 4b different from each other in the wavelength region of transmitted light.</p>
申请公布号 JP2003029393(A) 申请公布日期 2003.01.29
申请号 JP20010211483 申请日期 2001.07.12
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 NISHIYAMA SEIJI;WAKITA HISAHIDE
分类号 G03F7/095;G03F1/52;G03F1/54;G03F7/20;H01L21/027;H01L21/336;H01L29/786;(IPC1-7):G03F1/08 主分类号 G03F7/095
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