发明名称 |
MASK, PATTERN FORMING METHOD USING THE SAME, AND LITHOGRAPHY |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a mask capable of forming steps different from each other in layer thickness and excellent in intrasurface uniformity in a resist by a general exposure system. SOLUTION: The photomask 1 used for exposing a photosensitive resin layer 7 stacked on a substrate 6 to form a latent image in the layer 7 consists of a transparent support 2 and opaque light shielding parts 3 and a transmissive part 4 disposed on the support 2, and the transmissive part 4 has a first transmissive wavelength selective region 4a and a second transmissive wavelength selective region 4b different from each other in the wavelength region of transmitted light.</p> |
申请公布号 |
JP2003029393(A) |
申请公布日期 |
2003.01.29 |
申请号 |
JP20010211483 |
申请日期 |
2001.07.12 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
NISHIYAMA SEIJI;WAKITA HISAHIDE |
分类号 |
G03F7/095;G03F1/52;G03F1/54;G03F7/20;H01L21/027;H01L21/336;H01L29/786;(IPC1-7):G03F1/08 |
主分类号 |
G03F7/095 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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