Method for bonding a first substrate to a second substrate and application of the method to the fabrication of a three dimensional circuit device

摘要

The first substrate (11) includes electrically conductive structures (18) and insulating structures (16) of dielectric material in the region of a first main face (14). Gallium (19) is selectively precipitated on the surface of the electrically conductive structures by precipitation from the gas phase using a metal organic connection. The first substrate is joined to the second substrate (21) so that the first main face of the first substrate adjoins a second main face (21) of the second substrate. The gallium is mixed with a metal (28) to form an intermetallic phase, which has a melting point above the melting point of the pure gallium as well as the pure metal. The intermetallic phase forms a secure connection between the substrates.