| 摘要 |
Piezoresistive device having piezoresistive gauge(s) and an electric isolation layer, is made by forming a layer of material for the gauge on the electric isolation layer; forming a protection mask on the material layer; and in that, within areas that are not protected by the mask, etching the material or transformation of the material into an electric isolation material. <??>Manufacture of a piezoresistive device having piezoresistive gauge(s) (29) and an electric isolation layer upon which the gauge is formed, includes forming a layer of material for the gauge on the electric isolation layer; forming a protection mask on the layer of material for the gauge; and in that, within areas that are not protected by the mask, performing an etching of the material or a transformation of the material into an electric isolation material such that after selectively removing the mask. Side tangents (T) of the formed gauge, when observing a cross-section of the device, form over 90 degrees angles with a surface (37) of the electric isolation layer upon which the gauge is formed. |
