发明名称 |
METHOD FOR CONTROLLING GROWTH OF A SILICON CRYSTAL |
摘要 |
<p>A method and system for determining melt level and reflector position in a Czochralski single crystal growing apparatus. The crystal growing apparatus has a heated crucible containing a silicon melt from which the crystal is pulled. The crystal growing apparatus also has a reflector positioned within the crucible with a central opening through which the crystal is pulled. A camera generates images of a portion of the reflector and a portion of a reflection of the reflector visible on the top surface of the melt. An image processor processes the images as a function of their pixel values to detect an edge of the reflector and an edge of the reflection in the images. A control circuit determines a distance from the camera to the reflector and a distance from the camera to the reflection based on the relative positions of the detected edges in the images. The control circuit determines at least one parameter representative of a condition of the crystal growing apparatus based on the determined distances and controls the apparatus in response to the determined parameter.</p> |
申请公布号 |
EP1133592(B1) |
申请公布日期 |
2003.01.29 |
申请号 |
EP19990954694 |
申请日期 |
1999.09.30 |
申请人 |
MEMC ELECTRONIC MATERIALS, INC. |
发明人 |
FUERHOFF, ROBERT, H.;BANAN, MOHSEN |
分类号 |
C30B15/00;C30B15/26;C30B29/06;(IPC1-7):C30B15/26 |
主分类号 |
C30B15/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|