Semiconductor apparatus having wiring groove and contact hole formed in self-alignment manner and method of fabricating the same

摘要

A semiconductor apparatus and a process for fabricating the same according to the invention permit reduction in width of a wiring pattern of the semiconductor apparatus and in distance between wiring elements. A stopper film (13a) and an insulating film (13b) are provided on a substrate (11). The etching rate of RIE for the insulating film (13b) is greater than that for the stopper film (13a). The stopper film (14a) and insulating film (14b) are formed on the insulating film (13b). A pattern of the contact hole (32) is formed in the stopper film (14a). A wiring pattern is formed on the resist film (35). The insulating films (13b,14b) are etched by RIE with the resist film (35) and stopper film (14a) used as masks. Thus, a groove (31) for formation of wiring and a contact hole (32) for formation of a contact plug are simultaneously formed in a self-alignment manner.