| 摘要 |
A method of fabricating a semiconductor device first involves forming a conductive layer made of copper or its alloy as a principal component on a semiconductor substrate. Then, forming an insulating layer on the conductive layer. Next, forming an opening in the insulating layer with use of a resist pattern as a mask so as to reach the conductive layer; subjecting the resulting semiconductor substrate to an oxidizing/ashing treatment in an oxygen plasma atmosphere to remove the resist pattern and to oxidize at least an inner surface of the opening and finally, washing at least the inner surface of the opening with a solution containing citric acid as a principal component at normal temperature.
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