| 摘要 |
PURPOSE: To provide a silicon insulation film, in which the resistance against charge injection is high, without structural failures due to excessive fluorine atoms and to provide, such a silicon insulation film. CONSTITUTION: The silicon insulation film has a silicon dangling bond, terminated by the termination with fluorine atom and termination with a hydroxy group. The method of manufacturing the silicon insulation film has a termination step of performing termination process separately on the fluorine atom and the hydroxy group. The method of manufacturing the silicon insulation film has a step of terminating the silicon dangling bond, by using hypofluoric acid as a reactive species. The method of terminating the silicon dangling bond terminates the silicon dangling bond of the silicon insulation film of the silicon insulation film, by using hypofluorine oxyde.
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