STRUCTURE OF CRYSTALLINE SiC THIN FILM AND METHOD OF PRODUCING THE SAME

摘要

PROBLEM TO BE SOLVED: To prevent loss of Ge in a buffer layer between forming cubic SiC and a Si substrate, and to provide a structure of a crystalline SiC thin film with which a high quality crystalline SiC thin film can be obtained and a method of producing the same. SOLUTION: A GeC buffer layer 12 is interposed at a hetero interface between the Si substrate 11 and the crystalline SiC thin film 13. Thereby, when the crystalline SiC thin film 13 is produced, the lattice mismatching of the cubic SiC and Si is reduced and the density of the crystal defects in the cubic SiC can be lowered. Further, it is possible to lower the formation temperature of the cubic SiC by utilizing a hydrogen plasma sputtering method. Consequently, the loss of Ge in the buffer layer is suppressed during formation of the cubic SiC and the crystalline SiC thin film 13 having higher quality is obtained.