Semiconductor memory and method for fabricating the same

摘要

In a memory cell of a DRAM, that is, a semiconductor memory, a bit line (21a) connected to a bit line plug and a local interconnect (21b) are provided on a first interlayer insulating film (18). A connection conductor film (37) of TiAIN is provided on the top and side faces of an upper barrier metal (36) and side faces of a Pt film (35) and a BST film (34). No contact is formed above the Pt film used for forming an upper electrode, and the upper electrode is connected to an upper interconnect (namely, a Cu interconnect) (42) through the connection conductor film (37), a dummy lower electrode (33b), a dummy cell plug (30b) and the local interconnect (21b). Since the Pt film is not exposed to a reducing atmosphere, the characteristic degradation of a capacitor insulating film can be prevented.