SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PURPOSE: To enable enlargement of an overlapped displaced margin (allowable error) between a contact hole and a bit line, by decreasing the opening width of a lower end side of the contact hole while preventing the opening width of an upper end side of the contact hole from being decreased. CONSTITUTION: A contact hole 21 is provided in part of its inner wall surface with a slant wall member 51 which has a slant wall 21a to narrow the opening width of the contact hole 21. The slant wall member 51 is provided between a first interlayer insulating film 13 and a second interlayer insulating film 15, and the opening width of the contact hole 21 is set so that the opening width (W3) of the contact hole 21 at its lower end is narrower than the opening width of the hole 21 at its upper end.