发明名称 |
Cu seed layer deposition for ULSI metalization |
摘要 |
A novel method of Cu seed layer deposition for ULSI metalization is disclosed. The method of Cu seed layer deposition for ULSI metalization comprises forming a diffusion barrier on a substrate, forming a poly silicon layer, amorphous silicon layer or TaSix layer on said diffusion barrier, replacing said poly silicon layer with copper to form a copper seed layer, and electroplating a thick copper film on said copper seed layer. In this invention, a chemical replacing solution comprising a replacing reactant and at least one etchant is used to replace the poly silicon layer with copper and to reduce the quantity of byproducts of the reaction.
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申请公布号 |
US6511609(B2) |
申请公布日期 |
2003.01.28 |
申请号 |
US20010785170 |
申请日期 |
2001.02.20 |
申请人 |
INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE |
发明人 |
JAN CHING-HAN;HUANG FON-SHAN;WANG JIH-WEN |
分类号 |
B44C1/22;C03C15/00;C03C25/68;C23F1/00;H01L21/00;H01L21/288;H01L21/768;(IPC1-7):H01L21/00 |
主分类号 |
B44C1/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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