Method for preventing the leakage path in embedded non-volatile memory

摘要

A method for forming an embedded non-volatile memory is disclosed. The embedded non-volatile memory, comprises memory array and logic device area, is formed on a substrate where an oxide/nitride/oxide (ONO) layer on a memory array, a gate oxide layer on a logic device area. The method is that transistors of memory array and transistors of logic device area are formed by two separately photolithography processes. In memory array, the pitch between the poly gate electrodes is equivalent and has wider spacer width. In logic device area, the pitch between the poly gate electrodes is different and has suitable spacer width. According to above-mentioned, by using separated spacer width in memory array and logic device area can avoid the leakage path between bit line to bit line in subsequently self-aligned salicide process.