发明名称 Semiconductor device and method for producing the same
摘要 A first element electrode and a second element electrode connected electrically to a semiconductor element on a substrate are formed, and then an insulating film is formed on the substrate including the element electrodes. Thereafter, a first opening for exposing the first element electrode and a second opening for exposing the second element electrode are formed on the insulating film. Then, a first external electrode connected to the first element electrode via the first opening is formed immediately above the first element electrode. Furthermore, a second external electrode and a connecting wire having one end connected to the second element electrode via the second opening and the other end connected to the second external electrode are formed on the insulating film.
申请公布号 US6512298(B2) 申请公布日期 2003.01.28
申请号 US20010984191 申请日期 2001.10.29
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 SAHARA RYUICHI;WATASE KAZUMI;KUMAKAWA TAKAHIRO;KAINOH KAZUYUKI;SHIMOISHIZAKA NOZOMI
分类号 H01L23/52;H01L21/3205;H01L23/12;H01L23/31;H01L23/485;H01L23/522;(IPC1-7):H01L29/40 主分类号 H01L23/52
代理机构 代理人
主权项
地址