发明名称 Method for testing semiconductor devices
摘要 Method for determining a more efficient quality assurance or reliability test screen without falsely rejecting, i.e., over stressing, short channel length devices during voltage stress test screening. Short channel lengths devices fabricated on a semiconductor wafer have a higher tendency to fail at voltage levels that would otherwise not harm long channel length devices. The failures, however, are not related to device defects. Protection to the more vulnerable devices is provided by determining the speed of the die prior to the voltage test screen, thus, segregating the devices based on operational speed performance. Next, a lower voltage is effetively applied during wafer probe test to the faster devices, which directly correspond to the population of short channel devices.
申请公布号 US6512392(B2) 申请公布日期 2003.01.28
申请号 US20000738553 申请日期 2000.12.15
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 FLEURY ROGER W.;PATRICK JON A.
分类号 G01R31/26;G01R31/27;(IPC1-7):G01R1/06 主分类号 G01R31/26
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