发明名称 |
Method of fabricating SiO2 spacers and annealing caps |
摘要 |
Divot fill methods of incorporating thin SiO2 spacer and/or annealing caps into a complementary metal oxide semiconductor (CMOS) processing flow are provided. In accordance with the present invention, the divot fill processes provide a means for protecting the exposed surfaces of the thin SiO2 spacer and/or annealing cap such that those surfaces are not capable of being attacked by a subsequent silicide pre-cleaning step. CMOS devices including thin SiO2 spacer and/or annealing caps whose surfaces are protected such that those surfaces are not capable of being attacked by a subsequent silicide pre-cleaning or other process steps are also provided.
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申请公布号 |
US6512266(B1) |
申请公布日期 |
2003.01.28 |
申请号 |
US20010902830 |
申请日期 |
2001.07.11 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
DESHPANDE SADANAND V.;DORIS BRUCE B.;JAMMY RAJARAO;MA WILLIAM H. |
分类号 |
H01L21/336;H01L21/8238;H01L29/78;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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