Manufacturing method for semiconductor device with a larger contact hole opening

摘要

According to a manufacturing method for this semiconductor device, an etching process is carried out through wet etching so that a storage node interlayer insulating film has an etching rate with respect to an etchant for wet etching greater than that of a second interlayer insulating film and an opening first contact hole provided on storage node interlayer insulating film becomes greater than that of a first contact hole provided on second interlayer insulating film. By adopting this method, it becomes possible to obtain a semiconductor device capable of increasing a capacitance of a capacitor while an easy process can be adopted.