发明名称 Dual-level substrate voltage generator
摘要 A dual-level substrate voltage generator for generating a second voltage with a level higher than that of a first voltage and maintaining the level of the first voltage quickly and stably, thereby reducing sudden current dissipation during an active or pre-charge mode is disclosed. The dual-level substrate voltage generator includes a first substrate voltage generation block and a first voltage detecting block are used to provide the first substrate voltage at an optimum level. A second voltage generating block having a level lower than that of the first substrate voltage and a second voltage detecting block are used to provide the second substrate voltage at the optimum level to the second voltage generating block. A switching block divides a charge between the first and second substrate voltages.
申请公布号 US6512410(B2) 申请公布日期 2003.01.28
申请号 US20010895348 申请日期 2001.06.29
申请人 HYNIX SEMICONDUCTOR INC. 发明人 JEONG JEONG-SU
分类号 G05F3/20;(IPC1-7):H03K3/01 主分类号 G05F3/20
代理机构 代理人
主权项
地址