| 摘要 |
A method of producing a semiconductor memory having a memory cell structure in which a storage node, which consists of a capacitor electrode film having a rugged surface formed inside holes of an interlayer insulating film that is deposited on a substrate, constitutes a capacitor together with a cell plate through a dielectric film. In a method of forming holes in the interlayer insulating film in the direction of its thickness, forming the capacitor electrode inside the holes and over the upper surface of the interlayer insulating film, removing the capacitor electrode film exposed to the upper surface of the interlayer insulating film, making the surface of the capacitor electrode film formed inside the holes a rugged surface, and forming a cell plate inside the holes and on the upper surface of the interlayer insulating film, the capacitor electrode film exposed to the upper surface of the interlayer insulating film is removed before the surface of the capacitor electrode film formed inside the holes is made to be a rugged surface.
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