发明名称 Chemically amplified resist
摘要 A chemically amplified positive resist includes at least both a polyhydroxystyrene resin having a protective base which varies in polarity by an acid catalyst and a photoacid generator, wherein the chemically amplified positive resist is admixed with at least a styrene derivative.
申请公布号 US6511781(B2) 申请公布日期 2003.01.28
申请号 US19980176913 申请日期 1998.10.22
申请人 NEC CORPORATION 发明人 ITANI TOSHIROU
分类号 G03F7/004;G03F7/038;G03F7/039;H01L21/027;(IPC1-7):G03F7/28;G03F7/38 主分类号 G03F7/004
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