| 发明名称 |
Process for preparing a bolometer material and bolometer device |
| 摘要 |
Crystal phase V2O3 with x=1.5 in VOx is prepared. Such a lower specific resistance than a desired one as a starting film quality is modified to the final desired specific resistance by heating under an oxidizing atmosphere. A protective film for a bolometer material is formed by physical vapor deposition.
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| 申请公布号 |
US6512229(B2) |
申请公布日期 |
2003.01.28 |
| 申请号 |
US20010799001 |
申请日期 |
2001.03.06 |
| 申请人 |
NEC CORPORATION |
发明人 |
SASAKI TOKUHITO |
| 分类号 |
G01J1/02;C23C14/06;C23C14/08;C30B23/02;G01J5/02;G01J5/20;H01L37/00;(IPC1-7):G01J5/20 |
主分类号 |
G01J1/02 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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