Capacitor with high-epsi dielectric or ferroelectric material based on the fin stack principle

摘要

A capacitor in a semiconductor configuration on a substrate includes a noble-metal-containing first capacitor electrode which is formed with a plurality of mutually spaced-apart lamellae. The lamellae are oriented substantially parallel to a surface of the substrate and are mechanically and electrically connected to one another on a flank by a support structure. The capacitor furthermore has a capacitor dielectric formed of high-is in dielectric or ferroelectric material disposed on the first capacitor electrode. The capacitor also has a second capacitor electrode on the capacitor dielectric.