| 摘要 |
A semiconductor image sensor for detecting a light incident thereto, includes a semiconductor substrate divided into a light sensing region and a peripheral circuit region, a photodiode formed on top of the light sensing region, at least one transistor formed on top of the peripheral circuit region, at least one insulating layer formed on top of the photodiode and the transistor; and an optical layer formed on the insulating layer to efficiently transmit the light to the photodiode.
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