| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a non-volatile semiconductor memory provided with a constitution by which a leak current is prevented in a virtual grounding memory array. SOLUTION: The non-volatile semiconductor memory comprises a virtual ground memory array comprising a plurality of non-volatile memory cells and a plurality of sub-bit lines connected to the non-volatile memory cells, a first main bit line supplying a drain potential to a sub-bit line being a drain side of a selection memory cell, a second main bit line supplying a source potential to a sub-bit line being a source side of the selection memory cell, and a third main bit line supplying a potential being substantially same potential as the drain potential to a sub-bit line being adjacent to the sib bit line being the drain side of the selection memory cell.</p> |
