| 摘要 |
PROBLEM TO BE SOLVED: To form super-low junction by interposing a screen oxide film to which inert gas is ion-injected between a gate electrode and a nitride film spacer in the manufacturing process of a pMOS element. SOLUTION: This method for manufacturing a semiconductor element comprises the process of forming a gate insulating film 13 at the upper part of a semiconductor substrate 10; forming a gate electrode 15 at the upper part of the gate insulating film; forming a screen oxide film 17 on the full surface of the structure as the result of the formation of the gate electrode; ion-injecting nitrogen ion to the screen oxide film; evaporating a nitride film for a spacer at the upper part of the screen oxide film, carrying out an anneal process, and nitriding the nitrogen ion-injected screen oxide film; removing the nitride film for a spacer the nitrided screen oxide film 18, and forming spacers 19 constituted of the screen oxide film and the nitride film for the spacer at the side walls of the gate electrode, and forming p<+> source/drain areas 20 at the both sides of the spacers.
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