| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device realizing superior electrical connection even for the so-called 'borderless connection hole' in a multilayer wiring layer, and to provide a manufacturing method. SOLUTION: Inside a connection hole 16 formed on an interlayer insulation film 12 on a lower layer wiring layer 11, the barrier layer of high-melting point metal and the contact plug 17 of the high-melting point metal through the barrier layer are embedded. The barrier layer and a laminated film 18 composed of aluminum or the alloy film are formed on the contact plug, and an insulation film and the laminated film is patterned so as to be in contact with the contact plug. Further, by eliminating etching products, upper layer wiring is formed.
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