| 摘要 |
PROBLEM TO BE SOLVED: To electrically isolate a high performance photo diode from semiconductor integrated circuit which are formed on the same substrate. SOLUTION: A semiconductor device 1 comprises a photo diode 2 consisting of a high-concentration N-type silicon substrate 5, a first low-concentration N-type epitaxial layer 6, a second low-concentration N-type epitaxial layer 7 and a P-type anode unloading region 8, and a semiconductor integrated circuit formed on a P-type well region 9 in the layer 6. By this configuration, a depletion layer extending across the region 8, the layer 7 and the layer 6 is formed, thereby improving characteristics of the photo diode 2. Further, the semiconductor integrated circuit is isolated from the substrate 5 and the layer 6 by the region 9, and electrical interference between the photo diode 2 and the semiconductor integrated circuit and between semiconductor integrated circuits can be prevented.
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