| 摘要 |
PROBLEM TO BE SOLVED: To decrease the base resistance of a bipolar transistor. SOLUTION: This semiconductor device is provided with a collector layer 102 of a first conductivity type, a shallow trench 105 provided surrounding the collector layer 102, a first insulation film 106 provided covering the inside of the shallow trench 105, a semiconductor film 107 of a second conductivity type embedded in the shallow trench 105 provided with the first insulation film 106, an intrinsic base layer 110 of the second conductivity type provided on a collector layer 102 and the semiconductor film 107, an emitter layer 117 of the first conductivity type provided in the central part of the intrinsic base layer 110, an emitter led-out electrode 114 provided on the emitter layer 117 and a sidewall 115, composed of a second insulation film provided on the sidewall of the emitter led-out electrode 114, and an outer base layer is formed of the peripheral part of the intrinsic base layer 110 which is connected to the semiconductor film 107 and the semiconductor film 107.
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