| 摘要 |
PURPOSE: A high voltage device and a method for forming a metal line of the same are provided to stabilize the operation of a chip under a high voltage and a large quantity of current by widening the width of a metal line. CONSTITUTION: The first insulating layer is formed on an upper portion of a silicon substrate including a source doped region and a drain doped region. The first metal line is formed on an upper portion of the first insulating layer. The first metal line is formed with source metal(10), gate metal(11), drift metal, and drain metal(14). The second insulating layer(13) is formed on an upper portion of the first metal line. The second metal line(20) is formed on an upper portion of the second insulating layer(13). The second metal line(20) has an aperture for reducing an influence of electric field. A passivation layer(22) is formed on an upper portion of the second metal line(20).
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