| 摘要 |
PROBLEM TO BE SOLVED: To provide a production method for III-V compd. semiconductor crystal improved in crystallinity and surface morphology. SOLUTION: In the production method for III-V compd. semiconductor crystal, a III-V compd. semiconductor crystal containing Ga as group III elements at least and N as group V elements at least is grown on the wafer of materials different from the III-V compd. semiconductor crystal inside a reaction tube, with a group III organometallic compound having Ga in molecules at least and a compound having N in molecules as raw materials. Before starting the growth of the compound semiconductor crystal, the gas of at least one kind selected out of a group composed of a compound containing a halogen element and group V elements and halogenated hydrogen is led in, and a deposit on the inner wall of the reaction tube is removed by applying vapor-phase etching to the inner wall. |
