| 摘要 |
PROBLEM TO BE SOLVED: To provide the manufacturing method of a semiconductor device and the semiconductor device, for which the shape of a contact hole is an appropriate shape even when the micronization of the semiconductor device is advanced. SOLUTION: Since the shape of the contact hole 2a is provided so as to gradually and continuously reduce an opening as approaching the side of a lower layer wiring layer 1, a void part as before is not generated in a barrier metal layer 3 and a metal wiring layer 4 formed along the sidewall of the contact hole 2a.
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