| 摘要 |
PROBLEM TO BE SOLVED: To provide a flash memory device in which the current of a cell can be decreased at program operation by adjusting a source voltage of a flash memory cell and the program speed can be improved. SOLUTION: This device comprises a flash memory cell array, a multiplexer for selecting bit lines of the flash memory cell array, a decoder for selecting word lines of the flash memory cell array depending on global word line signals, a control signal, local word line signals and pre-decoding signals, an internal voltage generator for generating a prescribed internal voltage, and a source control unit for applying the internal voltage from the internal voltage generator to sources of a not-selected flash memory cell depending on the global word line signals, a sector program signal, a sector coding signal, and a read-out signal. |
