| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a thin film transistor whose electric characteristics are excellent. SOLUTION: This thin film transistor is provided with a substrate, a gate electrode formed on the substrate, a gate insulating film formed on the gate electrode, a first semiconductor film including a channel formation region formed on the gate insulating film, a pair of P or N conductivity type semiconductor films formed on the first semiconductor film, and a source electrode and drain electrode formed on the pair of second semiconductor films. The edges of the pair of second semiconductor films and the edges of the first semiconductor film have parts that match, and the pair of second semiconductor films are not partially covered with the source electrode or drain electrode.</p> |
