发明名称 METHOD OF MANUFACTURING CRYSTALLINE PHASE CHANGE LAYER OF SMOOTH SURFACE FOR ATOMIC RESOLUTION STORAGE
摘要 PROBLEM TO BE SOLVED: To provide a data memory medium having the surface of a phase change layer smooth at an atomic level. SOLUTION: The method of forming the crystalline phase change layer (100) leaving the surface smooth at the atomic level on the surface. And the crystalline phase change layer (100) smooth at the atomic level created by this method. This method includes forming the phase change layer (80) on a substrate (60), forming a thick cap layer (90) on the phase change layer (80), changing the phase change layer (80) from an amorphous to crystalline state, removing the thick cap layer (90) and forming the thin cap layer (110) on the phase change layer (100).
申请公布号 JP2003022581(A) 申请公布日期 2003.01.24
申请号 JP20020163096 申请日期 2002.06.04
申请人 HEWLETT PACKARD CO <HP> 发明人 LEE HEON;BICKNELL-TASSIUS ROBERT
分类号 G11B7/26;B05D1/36;B05D5/12;B32B3/02;B82B3/00;C23C16/00;G11B7/24;H01L21/00;(IPC1-7):G11B7/26 主分类号 G11B7/26
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