EPITAXIAL SEMICONDUCTOR WAFER AND PRODUCTION METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To suppress the generation of particles with handling on an epitaxial wafer with rear side polycrystal silicon film. SOLUTION: After a polycrystal film in the area at least 50μm from the intersection of a terminal part and a rear side is completely removed after polycrystal film coating, epitaxial growth is performed. No granular polycrystal silicon is generated close to a ridge line, where particles are easily generated in the case of handling and the particle generation is reduced.