METHOD FOR MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

PROBLEM TO BE SOLVED: To improve a yield of manufacturing steps of a flash memory by increasing a process margin in a SAC technique. SOLUTION: A method for manufacturing a semiconductor integrated circuit device comprises steps of coating an overhanging shape of a silicon nitride film 7 on a two-layer gate of a laminated structure having a conductor film 2 for a floating gate formed on a main surface of a semiconductor substrate 1 and a conductor film 3 for a control gate, and subsequently depositing an insulating film 8 made of a silicon oxide on the substrate 1. The method further comprises steps of perforating a contact hole CONT in the insulating film 8 with the silicon nitride film 7 as an etching stopper layer, then removing the exposed silicon nitride film 7, and then exposing an n-type semiconductor region D for forming a drain.