| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a new compound semiconductor epitaxial wafer by which the adverse effect by the contamination with impurities at the interface between an epitaxial layer and a substrate can be avoided. SOLUTION: In the method for manufacturing the compound semiconductor epitaxial wafer which comprises the steps of heating a compound semiconductor substrate 1 arranged in a reaction tube while allowing raw materials of groups III to V to flow through the reaction tube and growing epitaxial layers 2 and 3 having an objective element structure on the substrate 1 in a vapor phase, the substrate 1 is cleaned with CH3 Cl immediately before growing the epitaxial layer 2. Thereby, n-type impurities present on the surface of the substrate 1 are thoroughly removed, and the adverse effect due to the contamination with impurities at the interface between the epitaxial layer and the substrate can be avoided.
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