| 摘要 |
PROBLEM TO BE SOLVED: To obtain a high output and high reliability in a semiconductor laser element containing Al in an active layer region. SOLUTION: The semiconductor laser element comprises an i-type Inx4 Ga1-x4 P tensile strain carrier barrier layer 5 (x4<=0.49) and an i-type Inx5 Ga1-x5 P tensile carrier barrier layer 7 (x5<x4) respectively arranged between an Inx2 Ge1-x2 As1-y2 Py2 quantum well active layer 6, an n-type or i-type In0.49 Ga0.51 P optical waveguide layer 4 and a p-type or an i-type In0.49 Ga0.51 P optical waveguide layer 8. Then, a potential barrier of the layer 7 arranged at the p-type clad layer 9 of the active layer 6 is set larger than that of the tensile strain carrier barrier layer 5 arranged at the n-type clad layer 3 side.
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